onsemi MUN5214DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm

DUAL NPN BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

MUN Series 50 V 100 mA 10 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363

80@5mA,10V 2 NPN - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS

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100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

TRANS, 50V, 10/47KOHM, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resisto

Brt Transistor, 50V, 47K/10Kohm, Sot-363; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:10Kohm; Resistor R2 Base-Emisor:47Kohm; Ratio De La Resistencia, R1/R2:0.21 |Onsemi MUN5214DW1T1G

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.