onsemi MPSA14

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92

500 mA, 80 V NPN Small Signal Bipolar Junction Transistor. ONSSPCTRNSTVU6M5P;

NPN Bipolar Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

Small Signal Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):20000; Package/Case:TO-92; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

DARLINGTON TRANSISTOR, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain hFE:20000; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:300mA; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:1.2A; Current Ic Continuous a Max:1.2A; Current Ic hFE:100mA; Device Marking:MPSA14; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:125MHz; Gain Bandwidth ft Typ:125MHz; Hfe Min:20000; Package / Case:TO-92; Pin Configuration:b; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:30V; Voltage Vces:30V