onsemi MMUN2232LT1G

Bipolar Transistors (BJT); MMUN2232LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA

MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23-3

R1 = 4.7 KILO OHM, R2 = 4.7 KILO OHM DIGITAL NPN TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

MMUN2232LT1G NPN DIGITAL TRANSISTOR,100 MA 50V 4.7 KOHMS, RATIO OF 1,3-PIN SOT-23

15@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS

250mV@ 1mA,10mA NPN - Pre-Biased 400mW 5V 500nA 50V 50V 100mA SOT-23-3,TO-236 2.9mm*1.3mm*1mm

NPN Bipolar Digital Transistor (BRT)

Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R

Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:4.7Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2232LT1G.

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.