This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.

Fairchild Semiconductor

TRANSISTOR, JFET, N-CH, -40V, SOT-23-3; Breakdown Voltage Vbr: -40V; Zero Gate Voltage Drain Current Idss Min: -; Zero Gate Voltage Drain Current Idss Max: 30mA; Gate-Source Cutoff Voltage Vgs(off) Max: -10V; Transistor Case

Farnell

Bipolar Transistor; Power Dissipation, Pd:350mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Current Rating:30mA; Leaded Process Compatible:Yes; Package/Case:TO-92; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

Newark

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部品番号の別名

こちらの部品は、以下の代替部品番号で知られている場合があります：

MMBF4091 .
MMBF4091.
MMBF4091..

技術仕様

Physical

Case/PackageSOT-23

Contact PlatingTin

MountSurface Mount

Number of Pins3

Number of Terminals3

Weight30 mg

Technical

Breakdown Voltage-40 V

Continuous Drain Current (ID)30 mA

Current Rating30 mA

Drain to Source Resistance30 Ω

Drain to Source Voltage (Vdss)200 mV

Element ConfigurationSingle

Gate to Source Voltage (Vgs)-40 V

Input Capacitance16 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation350 mW

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

PackagingDigi-Reel®

Power Dissipation350 mW

Voltage Rating (DC)-40 V

Dimensions

Height1.2 mm

Length2.92 mm

Width1.3 mm

データシート & ドキュメント

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