onsemi MJE5850Gの詳細は販売業者から提供されます。
TRANSISTOR, BIPOLAR, SI, PNP, POWER, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, HFE 5
Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube / TRANS PNP 300V 8A TO220AB
Bipolar (Bjt) Single Transistor, Pnp, -300 V, 80 W, -8 A, 15 Rohs Compliant: Yes |Onsemi MJE5850G
300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
8.0 A, 300 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: