価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | MGSF1N02LT1 | 5,100 | 100 | |||||||||
| Master Electronics | MGSF1N02LT1 | 5,179 | 100 | |||||||||
| Onlinecomponents.com | MGSF1N02LT1 | 5,179 | 100 | Bulk | ||||||||
| Avnet | MGSF1N02LT1 | 0 | 3K | 6h | ||||||||
| Farnell | MGSF1N02LT1.. | 0 | 5 | 1d |
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-07-31
LTD Date2010-01-31
説明
onsemi MGSF1N02LT1の詳細は販売業者から提供されます。
Single N-Channel Power MOSFET 20V 750mA 90 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL
MOSFET N-CH 20V 750MA SOT-23 / N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Trans MOSFET N-CH 20V 0.75A 3-Pin SOT-23 T/R
MOSFET, N SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 750mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipatio
750 MILLI AMP, 20 VOLT N-CHANNEL POWER MOSFET Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)750 mA
Current Rating750 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance125 pF
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation400 mW
Rds On Max90 mΩ
Rise Time1 ns
Threshold Voltage1.7 V
Turn-Off Delay Time16 ns
Voltage Rating (DC)20 V