サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-04
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
説明
onsemi KSP06TAの詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 Ammo
NPN Epitaxial Silicon Transistor
Amplifier Transistor 80V 0.1uA 625mW TO-92 LEADED
KSP06TA, SINGLE BIPOLAR TRANSISTORS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min50
Max Breakdown Voltage80 V
Max Collector Current500 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Transition Frequency100 MHz
Voltage Rating (DC)80 V
Dimensions
Height4.58 mm
Length4.58 mm
Width3.86 mm