onsemi ISL9R860S3ST

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB

Rectifier Diode Switching 600V 8A 30ns 3-Pin(2+Tab) D2PAK T/R

DIODE, ULTRAFAST, 8A, 600V; Diode Type:Stealth Diode; Voltage, Vrrm:600V; Current, If AV:8A; Voltage, Vf Max:2.4V; Termination Type:SMD; Case Style:TO-263AB; SVHC:Cobalt dichloride; Current, Ifs Max:100A; Forward Voltage:2V; Max Reverse RecoveryTime, trr:18ns; Current, Ifrm:16A; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

The ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.