onsemi ISL9R860P2

Diode Ultra Fast Recovery Rectifier 600V 8A 2-Pin (2+Tab) TO-220AC Rail

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC

DIODE GEN PURP 600V 8A TO220AC / Rectifier Diode Switching 600V 8A 30ns 2-Pin(2+Tab) TO-220 Tube

ISL9 Series 600 V 8 A Through Hole Standard Stealth Diode - TO-220-2

DIODE, ULTRAFAST, 8A, 600V; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:2.4V; Reverse Recovery Time trr Max:18ns; Forward Surge Current Ifsm Max

DIODE, ULTRAFAST, 8A, 600V; Diode Type:Soft Recovery; Voltage, Vrrm:600V; Current, If AV:8A; Current, Ifsm:100A; Time, trr Typ:25ns; Voltage, Vf Max:2.4V; Temperature, Tj Max:175°C; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Case Style:TO-220AC; No. of Pins:2; Current, Ifs Max:100A; Forward Voltage:2V; Time, trr Max:18ns; Current, Ifrm:16A

The ISL9R860P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.