onsemi ISL9R18120G2

Rectifier Diode, 1 Phase, 1 Element, 18A, 1200V V(RRM), Silicon, TO-247
EOL
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element14 APACISL9R18120G201
12h
Win SourceWS-ISL9R18120G232,00011
1d
Worldway ElectronicsISL9R18120G215,6517Tube
23h
AztechISL9R18120G2489
19h
Fly-Wing TechnologyISL9R18120G218,624
3d

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onsemi

Datasheet9ページ6年前
Datasheet0ページ0年前
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IHS

_legacy Avnet

Fairchild Semiconductor

Farnell

サプライチェーン

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2002-06-04
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

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説明

onsemi ISL9R18120G2の詳細は販売業者から提供されます。

Rectifier Diode, 1 Phase, 1 Element, 18A, 1200V V(RRM), Silicon, TO-247
IHS
Diode Switching 1.2KV 15A 2-Pin(2+Tab) TO-247 Tube
Verical
TO-247, SINGLE, 1200V 18A HFST ULTRASOFT RECTIFIER
Avnet
Single 18A 100Ã×A@1.2kV 2.7V@18A 1.2kV TO-247-2 Diodes - General Purpose ROHS
Dasenic
DIODE FAST REC 1.2KV 18A TO247
DigiKey
Diodes - General Purpose, Power, Switching 18A 1200V Stealt
Best Source
DIODE GEN PURP 1200V 18A TO247-2
Vigor Components
DIODE, FAST, 18A, 1200V, TO-247; Diode Type:Fast Recovery; Voltage, Vrrm:1200V; Current, If AV:18A; Current, Ifsm:200A; Time, trr Typ:38ns; Voltage, Vf Max:3.3V; Temperature, Tj Max:150°C; Termination Type:Through Hole; Case Style:TO-247; No. of Pins:2; Current, Ifs Max:200A; Forward Voltage:3.3V; Time, trr Max:70ns; Current, Ifrm:36A
Farnell
The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth<SUP><FONT SIZE="-1">TM</FONT></SUP> diodes optimized for low loss performance in high frequency hard switched applications. The Stealth<SUP><FONT SIZE="-1">TM</FONT></SUP> family exhibits low reverse recovery current (I<sub>RM(REC)</sub>) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I<sub>RM(REC)</sub> and short t<sub>a</sub> phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth<SUP><FONT SIZE="-1">TM</FONT></SUP> diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49414.
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Rochester Electronics
UTSource

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