関連部品
InfineonIRF1018EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg
InfineonIRF1010EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
InfineonIRFZ48VPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S
説明
onsemi HUFA76439P3の詳細は販売業者から提供されます。
MOSFET N-CH 60V 75A TO-220AB
MOSFETs 71a, 60V, 0.014 Ohm Logic Level N-Ch
Power Field-Effect Transistor, 75A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating71 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time125 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.745 nF
Max Operating Temperature175 °C
Max Power Dissipation180 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation155 W
Rds On Max12 mΩ
Rise Time125 ns
Turn-Off Delay Time45 ns
Voltage Rating (DC)60 V