サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
関連部品
InfineonIPB80N06S2L11ATMA2
55V, N-Ch, 10.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
InfineonIPB77N06S212ATMA2
55V, N-Ch, 11.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
説明
onsemi HUFA75337S3STの詳細は販売業者から提供されます。
75 A 55 V 0.014 ohm N-CHANNEL Si POWER MOSFET TO-263AB
MOSFET N-CH 55V 75A D2PAK
MOSFETs 75a,55V,0.014Ohm,NCh UltraFET
Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
TAPE AND REEL HUF75337S3S
MISCELLANEOUS MOSFETS;
メーカーの別名
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.775 nF
Max Operating Temperature175 °C
Max Power Dissipation175 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation175 W
Rds On Max14 mΩ
Rise Time56 ns
Turn-Off Delay Time31 ns
Voltage Rating (DC)55 V