価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Worldway Electronics | HUF76419D3 | 21,724 | 7 | Tube | 1d |
説明
onsemi HUF76419D3の詳細は販売業者から提供されます。
MOSFETs 20a, 60V, 0.043 Ohm Logic Level N-Ch
TRANS MOSFET N-CH 60V 20A 3PIN TO-251
PWR MOS ULTRAFET 60V/20A/0.044 OHMS N-CH LL TO-251AA
Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:20A; On-Resistance, Rds(on):0.037ohm; Package/Case:TO-252; Drain Source On Resistance @ 10V:0.037ohm; Drain-Source Breakdown Voltage:20V; Gate-Source Voltage:3V RoHS Compliant: No
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance900 pF
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation75 W
Rds On Max37 mΩ
Rise Time35 ns
Turn-Off Delay Time50 ns
Voltage Rating (DC)60 V