サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
関連部品
InfineonIRFB5620PBF
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
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200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
説明
onsemi HUF75939P3の詳細は販売業者から提供されます。
MOSFETs 22a, 200V NCh MOSFET 0.125 Ohm
PWR MOS ULTRAFET 22A/200V/0.125 OHM TO-220
22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
Power Field-Effect Transistor, 22A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Current Rating20 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Operating Temperature175 °C
Max Power Dissipation180 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation180 W
Rds On Max125 mΩ
Rise Time26 ns
Turn-Off Delay Time65 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)200 V
Dimensions
Height20.4 mm