サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-04-06
LTD Date2007-10-06
関連部品
InfineonIRFR13N20DTRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.235Ohm;ID 13A;D-Pak (TO-252AA);PD 110W
InfineonIRFR13N20DTRLP
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.235Ohm;ID 13A;D-Pak (TO-252AA);PD 110W
説明
onsemi HUF75925D3STの詳細は販売業者から提供されます。
MOSFET N-CH 200V 11A DPAK
Power Field-Effect Transistor, 11A I(D), 200V, 0.275ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFETs 200V NCh PowerMOSFET UltraFET
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance275 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.03 nF
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation100 W
Rds On Max275 mΩ
Rise Time21 ns
Turn-Off Delay Time60 ns
Voltage Rating (DC)200 V