価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUF75329D3S | 1,175 | 268 | |||||||||
| Rochester Electronics | HUF75329D3S | 4,250 | 20h | |||||||||
| Win Source | WS-HUF75329D3S | 20 | 425 | 21h | ||||||||
| Worldway Electronics | HUF75329D3S | 10,985 | 7 | Tube | 2d | |||||||
| Klychip | HUF75329D3S | 連絡先 | 1 | >1wk |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-09-23
LTD Date2011-03-23
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onsemiHUFA76429D3S
20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | MOSFET N-CH 60V 20A DPAK
説明
onsemi HUF75329D3Sの詳細は販売業者から提供されます。
N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.026ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.06 nF
Max Operating Temperature175 °C
Max Power Dissipation128 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation128 W
Rds On Max26 mΩ
Rise Time30 ns
Turn-Off Delay Time10 ns
Voltage Rating (DC)55 V