onsemi HUF75329D3S

N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
$ 1.046
Obsolete

価格と在庫

データシート & ドキュメント

onsemi HUF75329D3Sのデータシートとメーカー資料をダウンロードする。

IHS

Datasheet10ページ24年前

onsemi

Fairchild Semiconductor

iiiC

在庫履歴

3か月間の傾向:
Restocked

サプライチェーン

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-09-23
LTD Date2011-03-23

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説明

onsemi HUF75329D3Sの詳細は販売業者から提供されます。

N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.026ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.

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