onsemi HUF75321P3

N-Channel 35 A 55 V 0.034 Ohm UltraFET Power Mosfet - TO-220AB

N-Channel UltraFET Power MOSFET 55V, 35A, 34mΩ

Trans MOSFET N-CH 55V 35A 3-Pin(3+Tab) TO-220AB Rail

55V 35A 34m´Î@10V35A 93W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

55 V, 35 A, 34 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.034Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.