価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQPF85N06 | 16,710 | 206 | |||||||||
| Rochester Electronics | FQPF85N06 | 90,469 | 21h | |||||||||
| Microchip USA | FQPF85N06 | 355 | 150 | Tray | 13h | |||||||
| Win Source | WS-FQPF85N06 | 44,835 | 200 | 22h | ||||||||
| Worldway Electronics | FQPF85N06 | 25,153 | 7 | Tube | 20h |
CADモデル
製造元 onsemi FQPF85N06 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 SnapEDA | フットプリント | ダウンロード |
CADモデルをダウンロードする際に、パートナーサイトが新しいタブで開きます。
OctopartからCADモデルをダウンロードすることにより、お客様は弊社の利用規約とプライバシーポリシーに同意したものとみなされます。
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-07
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
関連部品
InfineonIRFI3205PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 64A;TO-220 Full-Pak;PD 63W;-55de
InfineonIRFI1010NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 49A;TO-220 Full-Pak;PD 58W;-55de
STMicroelectronicsSTP80NF55-06FP
STP80NF55-06FP N-channel MOSFET Transistor, 60 A, 55 V, 3-Pin TO-220FP
説明
onsemi FQPF85N06の詳細は販売業者から提供されます。
Power MOSFET, N-Channel, QFET®, 60 V, 53 A, 10 mΩ, TO-220F
N-Channel 60 V 0.01 Ohm Through Hole Mosfet - TO-220F
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:60V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:62W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Package / Case:TO-220F; Power Dissipation Pd:62W; Power Dissipation Pd:62W; Pulse Current Idm:212A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)53 A
Current Rating53 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time170 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.12 nF
Max Operating Temperature175 °C
Max Power Dissipation62 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation62 W
Rds On Max10 mΩ
Resistance10 mΩ
Rise Time230 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time175 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)60 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm