サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
関連部品
InfineonIRFI530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.11Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55de
InfineonIRLI530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55deg
説明
onsemi FQPF19N10Lの詳細は販売業者から提供されます。
MOSFET N-CH 100V 13.6A TO-220F
Power Field-Effect Transistor, 13.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 100V N-Ch QFET Logic Level
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13.6 A
Current Rating19 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time140 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation38 W
Rds On Max100 mΩ
Rise Time410 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)100 V