サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
関連部品
STMicroelectronicsSTP15NK50ZFP
Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
STMicroelectronicsSTP14NK50ZFP
N-Channel 500 V 380 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
説明
onsemi FQPF13N50の詳細は販売業者から提供されます。
500V N-Channel MOSFET | MOSFET N-CH 500V 12.5A TO-220F
Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs 500V N-Channel QFET
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12.5 A
Current Rating12.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance430 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time85 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation56 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation56 W
Rds On Max430 mΩ
Rise Time140 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)500 V
Dimensions
Height19.5 mm