onsemi FQP10N60C

Trans MOSFET N-CH 600V 9.5A 3-Pin (3+Tab) TO-220 Rail

N-Channel QFET® MOSFET 600V, 9.5A, 730mΩ

Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:9.5A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:38A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:156W; Power, Pd:156W; Resistance, Rds on Max:0.73ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:600V; Voltage, Vgs th Max:4V; Width, External:10.67mm

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.