関連部品
InfineonIPI084N06L3GXKSA1
MOSFET N-CH 60V 50A TO262-3 / N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
説明
onsemi FQI7P06TUの詳細は販売業者から提供されます。
Trans MOSFET P-CH 60V 7A Automotive 3-Pin(3+Tab) I2PAK Rail
MOSFET P-CH 60V 7A I2PAK
Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
P-CHANNEL POWER MOSFET
MOSFETs 60V P-Channel QFET
3.75W(Ta)，45W(Tc) 4V@ 250µA 8.2nC@ 10V 1individualPChannel 60V 410mΩ@ 3.5A,10V 295pF@25V I2PAK，TO-262 Through hole mounting
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7 A
Current Rating-7 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance410 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance295 pF
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max410 mΩ
Rise Time50 ns
Turn-Off Delay Time7.5 ns
Voltage Rating (DC)-60 V