サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-07-19
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
関連部品
InfineonBUZ31H3046XKSA1
MOSFET N-CH 200V 14.5A TO262-3 N-Channel 200 V 14.5A (Tc) 95W (Tc) Through Hole PG-TO262-3-1
InfineonIPI600N25N3GAKSA1
MOSFET N-CH 250V 25A TO262-3 N-Channel 250 V 25A (Tc) 136W (Tc) Through Hole PG-TO262-3
説明
onsemi FQI3P20TUの詳細は販売業者から提供されます。
Trans MOSFET P-CH 200V 2.8A 3-Pin(3+Tab) I2PAK Rail
MOSFET P-CH 200V 2.8A I2PAK
Power Field-Effect Transistor, 2.8A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
P-CHANNEL POWER MOSFET
3.13W(Ta)，52W(Tc) 5V@ 250µA 8nC@ 10V 1individualPChannel 200V 2.7Ω@ 1.4A,10V 250pF@25V I2PAK，TO-262 Through hole mounting
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)2.8 A
Current Rating-2.8 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max2.7 Ω
Rise Time35 ns
Turn-Off Delay Time12 ns
Voltage Rating (DC)-200 V