サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-10
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2006-04-06
LTD Date2006-10-06
関連部品
STMicroelectronicsSTFI4N62K3
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAKFP package
説明
onsemi FQI2N80TUの詳細は販売業者から提供されます。
Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) I2PAK Rail
MOSFET N-CH 800V 2.4A I2PAK
Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
3.13W(Ta)，85W(Tc) 5V@ 250µA 15nC@ 10V 1individualNChannel 800V 6.3Ω@ 900mA,10V 550pF@25V I2PAK Through hole mounting
N-CHANNEL POWER MOSFET
MOSFETs 800V N-Channel QFET
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)2.4 A
Current Rating2.4 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance6.3 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance550 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max6.3 Ω
Rise Time30 ns
Turn-Off Delay Time25 ns
Voltage Rating (DC)800 V