サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
関連部品
onsemiFQI32N20CTU
Power Field-Effect Transistor, 28A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
説明
onsemi FQI19N20TUの詳細は販売業者から提供されます。
MOSFET N-CH 200V 19.4A I2PAK
Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
N-CHANNEL POWER MOSFET
MOSFETs 200V N-Channel QFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)19.4 A
Current Rating19.4 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.6 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max150 mΩ
Rise Time190 ns
Turn-Off Delay Time55 ns
Voltage Rating (DC)200 V