onsemi FQI12N60CTU
$ 1.193
Obsolete
関連部品
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N-channel 600 V, 0.48 Ohm, 13 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PAKFP package
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MOSFET N-CH 600V 10.5A I2PAK / Trans MOSFET N-CH 600V 10.5A 3-Pin(3+Tab) I2PAK Rail
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N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
説明
onsemi FQI12N60CTUの詳細は販売業者から提供されます。
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 600V 12A I2PAK
MOSFETs 600V N-Channel Adv Q-FET C-Series
N-CH/600V/12A/QFET C-SERIES
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.29 nF
Max Operating Temperature150 °C
Max Power Dissipation225 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation225 W
Rds On Max650 mΩ
Rise Time85 ns
Turn-Off Delay Time155 ns
Voltage Rating (DC)600 V