サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-14
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
説明
onsemi FQD4N25TM-WSの詳細は販売業者から提供されます。
N-Channel Power MOSFET, QFET®, 250 V, 3 A, 1.75 Ω, DPAK
Trans MOSFET N-CH 250V 3A 3-Pin(2+Tab) TO-252 T/R
Qf -250V 2.1Ohm Dpak/Reel Rohs Compliant: Yes |Onsemi FQD4N25TM-WS
Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 3
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.75 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance200 pF
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.75 Ω
Resistance1.75 Ω
Rise Time45 ns
Turn-Off Delay Time6.4 ns
Turn-On Delay Time6.8 ns
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
準拠ステートメント