サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-16
Lifecycle StatusObsolete (Last Updated: 7 months ago)
関連部品
InfineonIPD50R2K0CEBTMA1
Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIPD50R3K0CEAUMA1
IPD50R3K0CE: 500 V 1.7 A 3 Ohm SMT CoolMOS CE Power Transistor - PG-TO252-3
説明
onsemi FQD3N40TMの詳細は販売業者から提供されます。
Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK T/R
2.5W(Ta)，30W(Tc) 5V@ 250µA 7.5nC@ 10V 1individualNChannel 400V 3.4Ω@ 1A,10V 230pF@25V DPAK SMD mount
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance230 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.4 Ω
Rise Time40 ns
Turn-Off Delay Time10 ns
Voltage Rating (DC)400 V