説明
onsemi FQB9N50CFTMの詳細は販売業者から提供されます。
MOSFET N-CH 500V 9A D2PAK
MOSFETs 500V N-CH MOSFET
Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (15-Dec-2010); Current Id Max:9A; Package / Case:D2-PAK; Power Dissipation Pd:173W; Termination Type:SMD; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
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技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.03 nF
Max Operating Temperature150 °C
Max Power Dissipation173 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation173 W
Rds On Max850 mΩ
Rise Time65 ns
Turn-Off Delay Time93 ns