onsemi FQB5N50CFTMの詳細は販売業者から提供されます。
Power MOSFET, N Channel, 500 V, 5 A, 1.55 ohm, TO-263 (D2PAK), Surface Mount
Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):1.55ohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:5A; Resistance, Rds On:1.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Capacitance, Ciss Typ:480pF; Case Style, Alternate:TO-263; Current, Idm Pulse:20A; Marking, SMD:FQB5N50CF; Pin Format:G,D,S; Power Dissipation:96W; Power, Pd:96W; Temperature, Tj Max:150°C; Time, Fall:48ns; Time, Rise:46ns; Time, trr Typ:65ns; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:500V; Voltage, Vgs th Max:4V; dv/dt:4.5V/µs