サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
関連部品
onsemiFQB5N60CTM-WS
600V 4.5A 2´Î@10V2.25A 100W 4V@250uA 6.5pF@25V N Channel 515pF@25V 15nC@10V -55¡Í~+150¡Í@(Tj) D2PAK MOSFETs ROHS
説明
onsemi FQB3N60CTMの詳細は販売業者から提供されます。
MOSFET N-CH 600V 3A D2PAK
Power Field-Effect Transistor, 3A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs N-CH/400V/ .5A/3.4OHM
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance565 pF
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation75 W
Rds On Max3.4 Ω
Rise Time30 ns
Turn-Off Delay Time35 ns