サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
onsemiFQAF19N20L
Power Field-Effect Transistor, 16A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
説明
onsemi FQAF17P10の詳細は販売業者から提供されます。
MOSFET P-CH 100V 12.4A TO-3PF
Power Field-Effect Transistor, 12.4A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CHANNEL POWER MOSFET
MOSFETs 100V P-Channel QFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSC
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12.4 A
Current Rating-12.4 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation56 W
Rds On Max190 mΩ
Rise Time200 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-100 V
Dimensions
Height29.4 mm