onsemi FQAF13N80

N-Channel Power MOSFET, QFET®, 800V, 8A, 750mΩ, TO-3PF
Obsolete
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Flip ElectronicsFQAF13N80402
6d
AvnetFQAF13N800248
20h
Microchip USAFQAF13N80159600Tray
10h
Win SourceWS-FQAF13N8025,00050
18h
Worldway ElectronicsFQAF13N8011,6697Tube
17h

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onsemi FQAF13N80のデータシートとメーカー資料をダウンロードする。

IHS

Datasheet8ページ12年前

Newark

Fairchild Semiconductor

onsemi

iiiC

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-04-24
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

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説明

onsemi FQAF13N80の詳細は販売業者から提供されます。

N-Channel Power MOSFET, QFET®, 800V, 8A, 750mΩ, TO-3PF
onsemi
N-Channel 800 V 0.75 Ohm Through Hole Mosfet - TO-3PF
Future Electronics
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Rail
Verical
MOSFET, N-CH, 800V, 8A, 150DEG C, 120W; Available until stocks are exhausted Alternative available
Farnell
Power Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
120W(Tc) 30V 5V@ 250¦ÌA 88nC@ 10 V 1N 800V 750m¦¸@ 4A,10V 8A 3.5nF@25V TO-3PF 15.7mm*5.7mm*26.7mm
UnikeyIC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

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