onsemi FQA28N50

Power MOSFET, N-Channel, QFET®, 500 V, 28.4 A, 160 mΩ, TO-3P

310W(Tc) 30V 5V@ 250µA 140nC@ 10V 1individualNChannel 500V 160mΩ@ 14.2A,10V 28.4A 5.6nF@25V TO-3P Through hole mounting 23.8mm(height)

Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:28.4A; On Resistance Rds(On):0.16Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Product Range:-Rohs Compliant: Yes

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:28.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28.4A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:113.6A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.