サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-17
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
関連部品
STMicroelectronicsSTP180N10F3
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
説明
onsemi FQA160N08の詳細は販売業者から提供されます。
N-Channel Power MOSFET, QFET®, 80 V, 160 A, 7 mΩ, TO-3P
Trans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail
FQA Series 80 V 160 A 375 W Through Hole N-Channel QFet® Mosfet - TO-3PN
Power Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
80V 160A 5.6m´Î@10V80A 375W 4V@250uA 530pF@25V N Channel 6.1nF@25V 225nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)160 A
Current Rating160 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time410 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance7.9 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation375 W
Rds On Max7 mΩ
Rise Time970 ns
Turn-Off Delay Time260 ns
Turn-On Delay Time85 ns
Voltage Rating (DC)80 V
Dimensions
Height18.9 mm
Length15.8 mm
Width5 mm