関連部品
MicrochipAPTGFQ25H120T2G
FULL-BRIDGE NPT IGBT POWER MODULE Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES
説明
onsemi FP7G100US60の詳細は販売業者から提供されます。
Trans IGBT Module N-CH 600V 100A 7-Pin EPM Rail
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
IGBT MODULE 600V 100A 400W EPM7
IC MCU 16/32B 1MB FLASH 337NFBGA
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
メーカーの別名
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageModule
MountChassis Mount, Screw
Number of Pins7
Number of Terminals7
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationDual
InputStandard
Input Capacitance6.085 nF
Max Collector Current100 A
Max Operating Temperature125 °C
Max Power Dissipation400 W
Min Operating Temperature-40 °C
NTC ThermistorNo
Number of Elements2