onsemi FJP5321TU
$ 0.469
Obsolete
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-01-07
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2011-03-02
LTD Date2011-09-02
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NOW WEEN - BUJ303B - POWER BIPOL / Bipolar (BJT) Transistor NPN 400 V 5 A 100 W Through Hole TO-220AB
説明
onsemi FJP5321TUの詳細は販売業者から提供されます。
Bipolar (BJT) Transistor NPN 500V 5A 14MHz 100W Through Hole TO-220-3
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 500V 5A 100000mW 3-Pin(3+Tab) TO-220 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
メーカーの別名
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Collector Base Voltage (VCBO)800 V
Collector Emitter Breakdown Voltage500 V
Collector Emitter Voltage (VCEO)500 V
Current Rating5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency14 MHz
Gain Bandwidth Product14 MHz
hFE Min8
Max Collector Current5 A
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation100 W
Transition Frequency14 MHz
Voltage Rating (DC)500 V