サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-06-20
LTD Date2007-12-20
関連部品
onsemiKSC5030FRTU
Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
説明
onsemi FJAF6810ATUの詳細は販売業者から提供されます。
Tube Through Hole NPN Single Bipolar (BJT) Transistor 5 @ 6A 5V 1mA 60W 1.5kV
Power Bipolar Transistor, 10A I(C), 750V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 750V 10A 3-Pin(3+Tab) TO-3PF Rail
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSC
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.961991 g
Technical
Collector Base Voltage (VCBO)1.5 kV
Collector Emitter Breakdown Voltage750 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)750 V
Current Rating10 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min5
Max Collector Current10 A
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation60 W
Voltage Rating (DC)750 V