サプライチェーン
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-05-23
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2026-01-01
LTD Date2026-07-01
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説明
onsemi FGI3040G2-F085の詳細は販売業者から提供されます。
Trans IGBT Chip N-CH 390V 41A 150W 3-Pin(3+Tab) I2PAK Tube Automotive AEC-Q101
N-channel ignition IGBT for automotive ignition coil driver circuits and coil on plug applications.
Insulated Gate Bipolar Transistor, 41A I(C), 390V V(BR)CES, N-Channel
IGBT 400 V 41 A 150 W Through Hole I2PAK (TO-262)
TO-262AA-3 IGBT Transistors / Modules ROHS
RAIL / ECOSPARK 2 - 400V IGNITION IGBT
FGI3040G2_F085 Fairchild/ON Semiconductor
150W 1.15V 400V 41A I2PAK,TO-262 9.65mm
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Weight2.084 g
Technical
Clamping Voltage400 V
Collector Emitter Breakdown Voltage420 V
Collector Emitter Saturation Voltage1.15 V
Collector Emitter Voltage (VCEO)390 V
Continuous Collector Current41 A
Element ConfigurationSingle
Fall Time15 µs
Max Collector Current41 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Power Dissipation150 W
Rise Time7 µs
Turn-Off Delay Time4.8 µs
Turn-On Delay Time900 ns
Dimensions
Height15.01 mm