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製造元 onsemi FGH50N6S2D のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
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|---|---|---|---|
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サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-07-13
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
関連部品
onsemiHGTG30N60A4D
Trans IGBT Chip N-CH 600V 70A 463000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 75A 463W TO247
説明
onsemi FGH50N6S2Dの詳細は販売業者から提供されます。
FGH50N6S2D Series 600 V 75 A SMT 600V SMPS II Series N-Channel IGBT - TO-247
Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3+Tab) TO-247 Rail
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
COMP,600V,SMPS II SERIES SIZE 5 N-CHANNEL IGBT W/DIODE
463W 1.9V withbuilt-indiode 600V 75A TO-247-3 15.87mm*4.82mm*20.82mm
Ptpigbt To247 600V Smps2 Rohs Compliant: Yes
INSULATED GATE BIPOLAR TRANSISTO
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Fall Time Typ:50ns; Fall Time tf:50ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Pulsed Current Icm:240A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392 Product Highlights: 100kHz Operation at 390V, 40A 200kHZ Operation at 390V, 25A 600V Switching SOA Capability Typical Fall Time. . . . . . 90ns at TJ = 125C Low Gate Charge. . . . . . 70nC at VGE = 15V Low Plateau Voltage. . . . . . 6.5V Typical UIS Rated. . . . . . 480mJ Low Conduction Loss
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)600 V
Current Rating75 A
Element ConfigurationSingle
Fall Time100 ns
Max Collector Current75 A
Max Operating Temperature150 °C
Max Power Dissipation463 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation463 W
Reverse Recovery Time50 ns
Rise Time15 ns
Voltage Rating (DC)600 V
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
準拠ステートメント