onsemi FGH50N6S2

Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.7V @ 15V 30A 75A 463W 13ns/55ns
$ 4.826
Obsolete
データシート

価格と在庫

すべての値下げ情報を見る
DistributorSKUMinPkg
VericalFGH50N6S21,40660
Rochester ElectronicsFGH50N6S21,406
28m
Win SourceWS-FGH50N6S21,3107
2h
Worldway ElectronicsFGH50N6S215,3357Tube
1d
KlychipFGH50N6S2連絡先1
>1wk

データシート & ドキュメント

onsemi FGH50N6S2のデータシートとメーカー資料をダウンロードする。

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Datasheet11ページ5年前
Technical Drawing1ページ7年前

IHS

Future Electronics

Farnell

Jameco

在庫履歴

3か月間の傾向:
Restocked
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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-07-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-02
LTD Date2011-09-02

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説明

onsemi FGH50N6S2の詳細は販売業者から提供されます。

Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.7V @ 15V 30A 75A 463W 13ns/55ns
Fly-Wing Technology
600V, SMPS II Series N-Channel IGBT | IGBT 600V 75A 463W TO247
Win Source
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
IHS
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
Jameco
IGBT, N, TO-247; DC Collector Current:75A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Fall Time tf:50ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Power Dissipation Ptot Max:463W; Pulsed Current Icm:240A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
element14 APAC

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Augswan
Farnell
Rochester Electronics
Jameco

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