onsemi FGA30S120P

IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube
$ 3.657
EOL
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DistributorSKUMinPkg
AvnetFGA30S120P28241
3d
Rochester ElectronicsFGA30S120P600
13h
Flip ElectronicsFGA30S120P28
2d
FarnellFGA30S120P711
12h
element14 APACFGA30S120P711
2h

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onsemi FGA30S120Pのデータシートとメーカー資料をダウンロードする。

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Technical Drawing1ページ6年前

IHS

onsemi

Fairchild Semiconductor

TME

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3か月間の傾向:
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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-12-12
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)

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詳細

説明

onsemi FGA30S120Pの詳細は販売業者から提供されます。

IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube
Win Source
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
Farnell
IGBT, 1300V, 30A, Shorted-anode
onsemi
Insulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel
IHS
IGBT Transistors Shorted AnodeTM IGBT
Jak Electronics
晶体管, IGBT, 1.3KV, 60A, 175度 C, 348W;
element14 APAC
IGBT TRENCH/FS 1300V 60A TO3PN
Vigor Components
INSULATED GATE BIPOLAR TRANSISTO
ODG (Origin Data Global)
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
Fairchild Semiconductor

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RS
element14 APAC
TME
TME
Rochester Electronics

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