サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-07-29
LTD Date2022-01-29
説明
onsemi FGA30N60LSDTUの詳細は販売業者から提供されます。
600 V, 30 A PT IGBT Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
Trans IGBT Chip N-CH 600V 60A 480000mW 3-Pin(3+Tab) TO-3PN Rail
RAIL/N-CH / 30A 600V Planar IGBT
480W 1.3V 600V 60A TO-3P 15.8mm*5mm*18.9mm
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
INSULATED GATE BIPOLAR TRANSISTO
Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Fall Time2 µs
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation480 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape (CT)
Reverse Recovery Time35 ns
Schedule B8541290080
Dimensions
Height18.9 mm
Length15.8 mm
Width5 mm