サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
VishaySI8497DB-T2-E1
P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
説明
onsemi FDZ7296の詳細は販売業者から提供されます。
030 BALLS, FC-30B MOSFET BGA, 4.0 X 3.5MM PKG, SMD (Z5)<AZ
MOSFETs 30V N-Ch PowerTrench BGA MOSFET
Power Field-Effect Transistor, 11A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageBGA
MountSurface Mount
Number of Pins18
Number of Terminals18
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.52 nF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.1 W
Rds On Max8.5 mΩ
Rise Time4 ns
Turn-Off Delay Time27 ns
Voltage Rating (DC)30 V