サプライチェーン
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-06
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
関連部品
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MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.065Ohm;ID -3.7A;Micro3;PD 1.3W;VGS +/-12V
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Single P-Channel 20 V 1.3 W 8.0 nC Hexfet Power Mosfet Surface Mount - SOT-23
説明
onsemi FDZ193Pの詳細は販売業者から提供されます。
P-Channel PowerTrench® WL-CSP MOSFET -20V, -1A, 90mΩ
P-Channel 20 V 90 mOhm SMT PowerTrench Mosfet - WLCSP-6
MOSFET, P CH, -20V, -3A, WL-CSP; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:WL-CSP; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight54 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance300 mΩ
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance660 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Elements1
Power Dissipation1.5 W
Rds On Max90 mΩ
Resistance90 MΩ
Rise Time10 ns
Threshold Voltage-900 mV
Turn-Off Delay Time28 ns
Turn-On Delay Time13 ns
Dimensions
Height650 µm
Length1 mm
Width1.5 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
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