説明
onsemi FDW2512NZの詳細は販売業者から提供されます。
Transistor MOSFET Array Dual N-Channel 20V 6A 8-Pin TSSOP T/R
MOSFETs 2.5V,TSSOP8, DUAL, NCH SPECIFIED TRENCH
008, PLASTIC MODED, TSSOP-8 PKG, WIDE BODY, SMD (S4)<AZ
Power Field-Effect Transistor, 6A I(D), 20V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, N, SMD, TSSOP-8; Transistor type:PowerTrench; Voltage, Vds typ:20V; Current, Id cont:6A; Resistance, Rds on:0.028ohm; Voltage, Vgs Rds on measurement:4.5V; Voltage, Vgs th typ:0.8V; Case style:TSSOP-8; Capacitance, Ciss typ:670pF; Marking, SMD:2512NZ; Pins, No. of:8; Power, Pd:1.6W; Termination Type:SMD; Transistor polarity:Dual N; Voltage, Vds max:20V
メーカーの別名
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTSSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time57 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance670 pF
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation1.6 W
Rds On Max28 mΩ
Rise Time57 ns
Turn-Off Delay Time47 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length3 mm
Width4.4 mm