サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-20
Lifecycle StatusProduction (Last Updated: 9 months ago)
LTB Date2011-03-02
LTD Date2011-09-02
関連部品
説明
onsemi FDU8796の詳細は販売業者から提供されます。
Trans MOSFET N-CH 25V 35A 3-Pin(3+Tab) IPAK Tube
MOSFET N-CH 25V 35A I-PAK
88W(Tc) 2.5V@ 250µA 52nC@ 10V 1individualNChannel 25V 5.7mΩ@ 35A,10V 2.61pF@13V IPAK Through hole mounting
Power Field-Effect Transistor, 35A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
N-CHANNEL POWER MOSFET
MOSFETs LOW_VOLTAGE
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vds)25 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.61 nF
Max Operating Temperature175 °C
Max Power Dissipation88 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation88 W
Rds On Max5.7 mΩ
Rise Time24 ns
Turn-Off Delay Time99 ns
Voltage Rating (DC)25 V