サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
説明
onsemi FDS6894Aの詳細は販売業者から提供されます。
Trans MOSFET N-CH 20V 8A 8-Pin SOIC T/R
Power Field-Effect Transistor, 8A I(D), 20V, 0.017ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
20V/8V, 17/20/30MO, NCH, DUAL, SO8, 200A, PTII
Dual N-Channel Logic Level PWM Optimized PowerTrench ®
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:8A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.676 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation2 W
Rds On Max17 mΩ
Rise Time14 ns
Turn-Off Delay Time33 ns
Voltage Rating (DC)20 V