サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-20
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2007-02-28
LTD Date2007-08-29
関連部品
InfineonIRF7821TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7821PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
説明
onsemi FDS6670Sの詳細は販売業者から提供されます。
Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2.5W 20V 24nC@ 5V 1individualNChannel 30V 9mΩ@ 10V 13.5A 2.674nF@ 15V SOP SMD mount 4.9mm*3.9mm*1.75mm
SMALL SIGNAL N-CHANNEL MOSFET
MOSFETs SO-8
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOIC
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)13.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rise Time10 ns
Turn-Off Delay Time44 ns