関連部品
InfineonIRF8252PBF
2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
説明
onsemi FDS6162N7の詳細は販売業者から提供されます。
Trans MOSFET N-CH 20V 23A 8-Pin FLMP SOIC T/R
20V/12V, 4.5/6MO, NCH, SINGLE, SO8 FLMP, 300A GOX, PTII
Power Field-Effect Transistor, 23A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)23 A
Current Rating23 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time55 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance5.521 nF
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3 W
Rds On Max3.5 mΩ
Rise Time25 ns
Turn-Off Delay Time85 ns
Voltage Rating (DC)20 V